Gain Response and Ion Beam-Induced Donor Removal in nLGAD Detector: Global Gain Quenching
This study investigates the response of n-type low-gain avalanche detectors (nLGADs) to local ion-beam irradiation with low-penetrating 1.285-MeV gallium ions, focusing on charge collection efficiency (CCE) and gain degradation. Using the transient current technique (TCT), we present charge collecti...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/414772 |
| Acceso en línea: | http://hdl.handle.net/10261/414772 https://api.elsevier.com/content/abstract/scopus_id/105020744960 |
| Access Level: | acceso abierto |
| Palabra clave: | Donor removal global gain quenching (GGQ) ion beam-induced charge (IBIC) technique transient current technique (TCT) http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | This study investigates the response of n-type low-gain avalanche detectors (nLGADs) to local ion-beam irradiation with low-penetrating 1.285-MeV gallium ions, focusing on charge collection efficiency (CCE) and gain degradation. Using the transient current technique (TCT), we present charge collection maps before and after local irradiation. A 404-nm blue laser was used in postcharacterization, with no signal detected in the damaged zones after irradiation, suggesting significant charge trapping. The results reveal a pronounced vulnerability of nLGADs, with significant gain loss observed at fluences as low as 4 × 10<sup>9</sup> ions/cm<sup>2</sup>. This study confirms that a donor removal mechanism occurs at low fluences, and we hypothesize that this effect is linked to a vacancy-mediated mechanism. In addition, we report a global reduction in CCE, suggesting a long-range impact on electric field triggered by local defects. This phenomenon is referred to as the global gain quenching (GGQ). Simulations of the electric field provide further confirmation of GGQ’s occurrence. |
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