Assessment of the variability of the I-V characteristic of HfO<inf>2</inf>-based resistive switching devices and its simulation using the quasi-static memdiode model
Variability of the conduction characteristics of filamentary-type resistive switching devices or resistive RAMs (RRAMs) is a hot research topic both in academia and industry because it is currently considered one of the major showstoppers for the successful development and application of this techno...
| Autores: | , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/351112 |
| Acesso em linha: | http://hdl.handle.net/10261/351112 https://api.elsevier.com/content/abstract/scopus_id/85162796265 |
| Access Level: | acceso abierto |
| Palavra-chave: | HfO 2 | Memristor | Resistive switching | Variability |
| Resumo: | Variability of the conduction characteristics of filamentary-type resistive switching devices or resistive RAMs (RRAMs) is a hot research topic both in academia and industry because it is currently considered one of the major showstoppers for the successful development and application of this technology. In this work, we thoroughly investigate the statistics of the cycle-to-cycle (C2C) variability observed in the experimental current–voltage (I-V) curves of HfO2-based memristive structures using the fitdistrplus package for the R language. This exploratory analysis allows us to identify which parametric probability distributions are the most suitable candidates for describing our data. This study involves graphical tools such as the density, skewness-kurtosis (S-K), and quantile–quantile (Q-Q) plots. The analysis is completed with the aid of goodness-of-fit statistics (Kolmogorov-Smirnov, Cramer-von Mises, Anderson-Darling) and criteria (Akaike's and Bayesian). The selected distributions are incorporated into the SPICE script of the quasi-static memdiode model for resistive switching devices and used for simulating uncorrelated C2C variability. Finally, a one-way sensitivity analysis is carried out in order to test the impact of the model parameters variation in the output characteristics of the device. |
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