Impact of the Ti/HfO2 Thickness Ratio on the Resistive Switching Characteristics of Memristive Devices
This work investigates the impact of the Ti thickness on the resistive switching behavior of Ti/HfO-based memristors, with particular focus on the Ti-to-HfO thickness ratio (t/t). Understanding the interplay between the Ti layer and the switching dynamics of the devices is crucial for enhancing thei...
| Autores: | , , , |
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| Tipo de recurso: | capítulo de libro |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:dnet:uabarcelona_::1862aa82aaca5581dbf48fea55af6c17 |
| Acceso en línea: | https://ddd.uab.cat/record/328154 https://dx.doi.org/urn:doi:10.1109/CDE66381.2025.11038885 |
| Access Level: | acceso embargado |
| Palabra clave: | HfO2 Memristors Resistive switching Ti capping layer VCM |
| Sumario: | This work investigates the impact of the Ti thickness on the resistive switching behavior of Ti/HfO-based memristors, with particular focus on the Ti-to-HfO thickness ratio (t/t). Understanding the interplay between the Ti layer and the switching dynamics of the devices is crucial for enhancing their performance and opening up new opportunities for advanced applications. This paper provides a comprehensive analysis of how a modification of the (t/t) ratio affects the Resistive Switching characteristics of the devices. The reported results allow us to identify the optimal conditions required to achieve enhanced memristor functionality, which is essential for applications such as data storage and neuromorphic computing. |
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