Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors
The low- and high-resistance states in Ti/HfO-based memristors were investigated. The statistical analysis of experimental data was carried out with the aid of the fitdistrplus package for the R language and the obtained results were considered in SPICE simulations using the Dynamic Memdiode Model f...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2026 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:dnet:uabarcelona_::90a55021f59f190532eaac75fa795ea2 |
| Acceso en línea: | https://ddd.uab.cat/record/328153 https://dx.doi.org/urn:doi:10.1016/j.sse.2026.109352 |
| Access Level: | acceso abierto |
| Palabra clave: | HfO2 Memristors Resistive switching Dynamic memdiode model |
| Sumario: | The low- and high-resistance states in Ti/HfO-based memristors were investigated. The statistical analysis of experimental data was carried out with the aid of the fitdistrplus package for the R language and the obtained results were considered in SPICE simulations using the Dynamic Memdiode Model for resistive switching devices. It was found that devices with a large thickness ratio t/t ≥ 0.5 exhibit superior performance in terms of switching stability, variability, and magnitude of the resistance window compared with those with a lower ratio. These observations shed light on the role played by the Ti capping layer in the switching performance of practical memristors, a crucial issue for the potential application of these devices in fields such as information storage and neuromorphic computing. |
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