Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer

Understanding the ultrafast transport properties of charge carriers in transition metal dichalcogenides is essential for advancing technologies based on these materials. Here, we study MoSe2 crystals with thicknesses down to the monolayer, combining ultrafast spatiotemporal microscopy and quantitati...

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Detalhes bibliográficos
Autores: Lo Gerfo Morganti, Giulia, Rosati, Roberto, Brinatti Vazquez, Guillermo Daniel, Varghese, Sebin, Saleta Reig, David, Malic, Ermin, van Hulst, Niek, Tielrooij, Klaas-Jan
Formato: conjunto de datos
Fecha de publicación:2026
País:España
Recursos:Consorci de Serveis Universitaris de Catalunya (CSUC)
Repositorio:CORA.Repositori de Dades de Recerca
OAI Identifier:oai:dnet:cora.rdr____::11925d1e2a01042ee52aa7fd175736e4
Acesso em linha:https://doi.org/10.34810/DATA3088
Access Level:acceso abierto
Palavra-chave:Physics
Transition metal dichalcogenides
Excitons
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spelling Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayerLo Gerfo Morganti, GiuliaRosati, RobertoBrinatti Vazquez, Guillermo DanielVarghese, SebinSaleta Reig, DavidMalic, Erminvan Hulst, NiekTielrooij, Klaas-JanPhysicsTransition metal dichalcogenidesExcitonsUnderstanding the ultrafast transport properties of charge carriers in transition metal dichalcogenides is essential for advancing technologies based on these materials. Here, we study MoSe2 crystals with thicknesses down to the monolayer, combining ultrafast spatiotemporal microscopy and quantitative microscopic modelling. Crucially, we obtain the intrinsic ultrafast transport dynamics by studying suspended crystals that do not suffer from detrimental substrate effects. In mono- and bilayer crystals, we identify four sequential transport regimes. The first two regimes involve high-energy non-thermalized and quasi-thermalized carriers that propagate rapidly with diffusivities up to 1000 cm2/s. After ~1.5 ps, a remarkable third regime occurs with apparent negative diffusion, finally followed by exciton propagation limited by trapping into defect states. Interestingly, for trilayer and thicker crystals, only the first and last regimes occur. This work underscores the role of traps and dielectric environment in electron transport, offering valuable insights for the development of (flexible) (opto)electronic applications.CORA.Repositori de Dades de RecercaCamps, Ferran2026info:eu-repo/semantics/datasethttps://doi.org/10.34810/DATA3088reponame:CORA.Repositori de Dades de Recercainstname:Consorci de Serveis Universitaris de Catalunya (CSUC)Inglésinfo:eu-repo/semantics/openAccessCC BY 4.0oai:dnet:cora.rdr____::11925d1e2a01042ee52aa7fd175736e42026-06-17T12:20:17Z
dc.title.none.fl_str_mv Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
title Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
spellingShingle Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
Lo Gerfo Morganti, Giulia
Physics
Transition metal dichalcogenides
Excitons
title_short Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
title_full Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
title_fullStr Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
title_full_unstemmed Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
title_sort Replication Data for: Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer
dc.creator.none.fl_str_mv Lo Gerfo Morganti, Giulia
Rosati, Roberto
Brinatti Vazquez, Guillermo Daniel
Varghese, Sebin
Saleta Reig, David
Malic, Ermin
van Hulst, Niek
Tielrooij, Klaas-Jan
author Lo Gerfo Morganti, Giulia
author_facet Lo Gerfo Morganti, Giulia
Rosati, Roberto
Brinatti Vazquez, Guillermo Daniel
Varghese, Sebin
Saleta Reig, David
Malic, Ermin
van Hulst, Niek
Tielrooij, Klaas-Jan
author_role author
author2 Rosati, Roberto
Brinatti Vazquez, Guillermo Daniel
Varghese, Sebin
Saleta Reig, David
Malic, Ermin
van Hulst, Niek
Tielrooij, Klaas-Jan
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Camps, Ferran
dc.subject.none.fl_str_mv Physics
Transition metal dichalcogenides
Excitons
topic Physics
Transition metal dichalcogenides
Excitons
description Understanding the ultrafast transport properties of charge carriers in transition metal dichalcogenides is essential for advancing technologies based on these materials. Here, we study MoSe2 crystals with thicknesses down to the monolayer, combining ultrafast spatiotemporal microscopy and quantitative microscopic modelling. Crucially, we obtain the intrinsic ultrafast transport dynamics by studying suspended crystals that do not suffer from detrimental substrate effects. In mono- and bilayer crystals, we identify four sequential transport regimes. The first two regimes involve high-energy non-thermalized and quasi-thermalized carriers that propagate rapidly with diffusivities up to 1000 cm2/s. After ~1.5 ps, a remarkable third regime occurs with apparent negative diffusion, finally followed by exciton propagation limited by trapping into defect states. Interestingly, for trilayer and thicker crystals, only the first and last regimes occur. This work underscores the role of traps and dielectric environment in electron transport, offering valuable insights for the development of (flexible) (opto)electronic applications.
publishDate 2026
dc.date.none.fl_str_mv 2026
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
format dataset
dc.identifier.none.fl_str_mv https://doi.org/10.34810/DATA3088
url https://doi.org/10.34810/DATA3088
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
CC BY 4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv CC BY 4.0
dc.publisher.none.fl_str_mv CORA.Repositori de Dades de Recerca
publisher.none.fl_str_mv CORA.Repositori de Dades de Recerca
dc.source.none.fl_str_mv reponame:CORA.Repositori de Dades de Recerca
instname:Consorci de Serveis Universitaris de Catalunya (CSUC)
instname_str Consorci de Serveis Universitaris de Catalunya (CSUC)
reponame_str CORA.Repositori de Dades de Recerca
collection CORA.Repositori de Dades de Recerca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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