Supplementary Information for Transient ultrafast and negative diffusion of charge carriers in suspended MoSe2 from multilayer to monolayer

1. Spatiotemporal measurements: Supplementary Note 1 - Time resolution and Time-zero. -- Supplementary Note 2: Setup schematics. -- Supplementary Note 3: Thicker simples. -- Supplementary Note 4: Decay dynamics; Effect of diffusion on the decay dynamics. -- Supplementary Note 5: Spectral resolution....

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Detalles Bibliográficos
Autores: Lo Gerfo Morganti, Giulia, Rosati, Roberto, Brinatti Vazquez, Guillermo D., Varghese, Sebin, Saleta Reig, David, Malic, Ermin, Hulst, Niek F. van, Tielrooij, Klaas-Jan
Tipo de recurso: conjunto de datos
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/400605
Acceso en línea:http://hdl.handle.net/10261/400605
Access Level:acceso abierto
Descripción
Sumario:1. Spatiotemporal measurements: Supplementary Note 1 - Time resolution and Time-zero. -- Supplementary Note 2: Setup schematics. -- Supplementary Note 3: Thicker simples. -- Supplementary Note 4: Decay dynamics; Effect of diffusion on the decay dynamics. -- Supplementary Note 5: Spectral resolution. -- Supplementary Note 6: Fluence dependence on suspended simples. -- Supplementary Note 7: Gaussian fits. -- Supplementary Note 8: Beam sises. – 2. Microscopic modelling. -- Supplementary Note 9: Microscopic description. -- Supplementary Note 10: Role of excitonic and trapped densities and their ratio. -- Supplementary Note 11: Role of thermalization velocity. -- Supplementary Note 12: Universality of the model

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