Unraveling heat transport and dissipation in suspended MoSe2 from bulk to monolayer

Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by mate...

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Detalles Bibliográficos
Autores: Saleta Reig, David|||0000-0003-3189-2331, Varghese, Sebin|||0000-0001-7204-7121, Farris, Roberta|||0000-0001-6710-0100, Block, Alexander|||0000-0001-9288-5405, Mehew, Jake Dudley|||0000-0002-8859-9374, Hellman, Olle|||0000-0002-3453-2975, Woźniak, Pawel|||0000-0002-2753-5959, Sledzinska, Marianna|||0000-0001-8592-1121, Sachat, Alexandros el|||0000-0003-3798-9724, Chávez Ángel, Emigdio|||0000-0002-9783-0806, Valenzuela, Sergio O.|||0000-0002-4632-8891, van Hulst, Niek F.|||0000-0003-4630-1776, Ordejon, Pablo|||0000-0002-2353-2793, Zanolli, Zeila|||0000-0003-0860-600X, Sotomayor Torres, Clivia M.|||0000-0001-9986-2716, Verstraete, Matthieu J.|||0000-0001-6921-5163, Tielrooij, Klaas-Jan|||0000-0002-0055-6231
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:266366
Acceso en línea:https://ddd.uab.cat/record/266366
https://dx.doi.org/urn:doi:10.1002/adma.202108352
Access Level:acceso abierto
Palabra clave:2D materials
Ab initio
Heat transport
Raman thermometry
Transition metal dichalcogenides
Descripción
Sumario:Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by material thickness and the material's environment. This combined experimental-theoretical study establishes a unifying physical picture of the intrinsic lattice thermal conductivity of the representative TMD MoSe. Thermal conductivity measurements using Raman thermometry on a large set of clean, crystalline, suspended crystals with systematically varied thickness are combined with ab initio simulations with phonons at finite temperature. The results show that phonon dispersions and lifetimes change strongly with thickness, yet the thinnest TMD films exhibit an in-plane thermal conductivity that is only marginally smaller than that of bulk crystals. This is the result of compensating phonon contributions, in particular heat-carrying modes around ≈0.1 THz in (sub)nanometer thin films, with a surprisingly long mean free path of several micrometers. This behavior arises directly from the layered nature of the material. Furthermore, out-of-plane heat dissipation to air molecules is remarkably efficient, in particular for the thinnest crystals, increasing the apparent thermal conductivity of monolayer MoSe by an order of magnitude. These results are crucial for the design of (flexible) TMD-based (opto-)electronic applications.