Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors

In this study, we analyze the impact of back-channel radiation-induced leakage and back-gate bias on switch-off drain current transients of thin-gate-oxide partially depleted (PD) silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The presence of radia...

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Detalles Bibliográficos
Autores: Rafí, Joan Marc, Mercha, Abdelkarim, Simoen, Eddy, Hayama, Kiyoteru, Claeys, C.
Tipo de recurso: artículo
Fecha de publicación:2004
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/256992
Acceso en línea:http://hdl.handle.net/10261/256992
https://api.elsevier.com/content/abstract/scopus_id/13644275257
Access Level:acceso abierto
Palabra clave:Buried oxide | Drain current transients | Floating-body effects | Generation lifetime | Proton irradiation | Radiation effects | Recombination lifetime | Silicon-on-insulator (SOI) MOSFETs
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spelling Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistorsRafí, Joan MarcMercha, AbdelkarimSimoen, EddyHayama, KiyoteruClaeys, C.Buried oxide | Drain current transients | Floating-body effects | Generation lifetime | Proton irradiation | Radiation effects | Recombination lifetime | Silicon-on-insulator (SOI) MOSFETsIn this study, we analyze the impact of back-channel radiation-induced leakage and back-gate bias on switch-off drain current transients of thin-gate-oxide partially depleted (PD) silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The presence of radiation-induced positive trapped charges in the buried oxide after 60 MeV proton irradiation is found to reduce the "switch-off" transient times for gate voltages above and below the front-gate threshold voltage for body-to-gate electron valence band tunnelling. An increase in steady-state drain current and an increase in the amplitude of weak inversion drain current transients are observed. A similar effect is observed when applying a positive bias to the back-gate, which is found to generate an "irradiation-like" subthreshold leakage. The observed switch-off drain current transient behavior is explained by taking into account an edge parasitic back-channel transient component, which is added to the conventional front-gate drain current transient.Peer reviewed0000-0003-4581-94770000-0003-4581-9477Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212004info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/256992https://api.elsevier.com/content/abstract/scopus_id/13644275257reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papershttps://doi.org/10.1143/JJAP.43.7984Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2569922026-05-22T06:33:51Z
dc.title.none.fl_str_mv Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
title Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
spellingShingle Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
Rafí, Joan Marc
Buried oxide | Drain current transients | Floating-body effects | Generation lifetime | Proton irradiation | Radiation effects | Recombination lifetime | Silicon-on-insulator (SOI) MOSFETs
title_short Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
title_full Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
title_fullStr Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
title_full_unstemmed Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
title_sort Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
dc.creator.none.fl_str_mv Rafí, Joan Marc
Mercha, Abdelkarim
Simoen, Eddy
Hayama, Kiyoteru
Claeys, C.
author Rafí, Joan Marc
author_facet Rafí, Joan Marc
Mercha, Abdelkarim
Simoen, Eddy
Hayama, Kiyoteru
Claeys, C.
author_role author
author2 Mercha, Abdelkarim
Simoen, Eddy
Hayama, Kiyoteru
Claeys, C.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv 0000-0003-4581-9477
0000-0003-4581-9477
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Buried oxide | Drain current transients | Floating-body effects | Generation lifetime | Proton irradiation | Radiation effects | Recombination lifetime | Silicon-on-insulator (SOI) MOSFETs
topic Buried oxide | Drain current transients | Floating-body effects | Generation lifetime | Proton irradiation | Radiation effects | Recombination lifetime | Silicon-on-insulator (SOI) MOSFETs
description In this study, we analyze the impact of back-channel radiation-induced leakage and back-gate bias on switch-off drain current transients of thin-gate-oxide partially depleted (PD) silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The presence of radiation-induced positive trapped charges in the buried oxide after 60 MeV proton irradiation is found to reduce the "switch-off" transient times for gate voltages above and below the front-gate threshold voltage for body-to-gate electron valence band tunnelling. An increase in steady-state drain current and an increase in the amplitude of weak inversion drain current transients are observed. A similar effect is observed when applying a positive bias to the back-gate, which is found to generate an "irradiation-like" subthreshold leakage. The observed switch-off drain current transient behavior is explained by taking into account an edge parasitic back-channel transient component, which is added to the conventional front-gate drain current transient.
publishDate 2004
dc.date.none.fl_str_mv 2004
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/256992
https://api.elsevier.com/content/abstract/scopus_id/13644275257
url http://hdl.handle.net/10261/256992
https://api.elsevier.com/content/abstract/scopus_id/13644275257
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
https://doi.org/10.1143/JJAP.43.7984
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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