A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates

The compound GaP1-xNx is highly attractive to pseudomorphically integrate red-light emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with a direct bandgap energy of ≈1.96 eV for x = 0.021. Here, we report on the chemical beam epitaxy of GaP1...

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Detalles Bibliográficos
Autores: Ben Saddik, Karim, García Carretero, Basilio Javier, Fernández Garrido, Sergio
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/704353
Acceso en línea:http://hdl.handle.net/10486/704353
https://dx.doi.org/10.1063/5.0067209
Access Level:acceso abierto
Palabra clave:Dimethylhydrazine
Growth Diagrams
Lattice-Matched
Light-Emitting Device
Molefraction
Red Light
Si Substrates
Si-Technology
Single Phasis
Tertiarybutylphosphine
Física
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spelling A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substratesBen Saddik, KarimGarcía Carretero, Basilio JavierFernández Garrido, SergioDimethylhydrazineGrowth DiagramsLattice-MatchedLight-Emitting DeviceMolefractionRed LightSi SubstratesSi-TechnologySingle PhasisTertiarybutylphosphineFísicaThe compound GaP1-xNx is highly attractive to pseudomorphically integrate red-light emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with a direct bandgap energy of ≈1.96 eV for x = 0.021. Here, we report on the chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates. The incorporation of N into GaP1-xNx was systematically investigated as a function of growth temperature and the fluxes of the N and P precursors, 1,1-dimethylhydrazine (DMHy) and tertiarybutylphosphine (TBP), respectively. We found that the N mole fraction exhibits an Arrhenius behavior characterized by an activation energy of (0.79 ± 0.05) eV. With respect to the fluxes, we determined that the N mole fraction is linearly proportional to the flux of DMHy and inversely proportional to the one of TBP. All results are summarized in a universal equation that describes the dependence of x on the growth temperature and the fluxes of the group-V precursors. The results are further illustrated in a growth diagram that visualizes the variation of x as the growth temperature and the flux of DMHy are varied. This diagram also shows how to obtain single-phase and flat GaP1-xNx layers, as certain growth conditions result in chemically phase-separated layers with rough surface morphologies. Finally, our results demonstrate the feasibility of chemical beam epitaxy to obtain single-phase and flat GaP1-xNx layers with x up to about 0.04, a value well above the one required for the lattice-matched integration of GaP1-xNx-based devices on SiAmerican Institute of PhysicsDepartamento de Física AplicadaFacultad de Ciencias20212021-12-06research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/704353https://dx.doi.org/10.1063/5.0067209reponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/7043532026-06-23T12:46:27Z
dc.title.none.fl_str_mv A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
title A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
spellingShingle A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
Ben Saddik, Karim
Dimethylhydrazine
Growth Diagrams
Lattice-Matched
Light-Emitting Device
Molefraction
Red Light
Si Substrates
Si-Technology
Single Phasis
Tertiarybutylphosphine
Física
title_short A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
title_full A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
title_fullStr A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
title_full_unstemmed A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
title_sort A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
dc.creator.none.fl_str_mv Ben Saddik, Karim
García Carretero, Basilio Javier
Fernández Garrido, Sergio
author Ben Saddik, Karim
author_facet Ben Saddik, Karim
García Carretero, Basilio Javier
Fernández Garrido, Sergio
author_role author
author2 García Carretero, Basilio Javier
Fernández Garrido, Sergio
author2_role author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Facultad de Ciencias
dc.subject.none.fl_str_mv Dimethylhydrazine
Growth Diagrams
Lattice-Matched
Light-Emitting Device
Molefraction
Red Light
Si Substrates
Si-Technology
Single Phasis
Tertiarybutylphosphine
Física
topic Dimethylhydrazine
Growth Diagrams
Lattice-Matched
Light-Emitting Device
Molefraction
Red Light
Si Substrates
Si-Technology
Single Phasis
Tertiarybutylphosphine
Física
description The compound GaP1-xNx is highly attractive to pseudomorphically integrate red-light emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with a direct bandgap energy of ≈1.96 eV for x = 0.021. Here, we report on the chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates. The incorporation of N into GaP1-xNx was systematically investigated as a function of growth temperature and the fluxes of the N and P precursors, 1,1-dimethylhydrazine (DMHy) and tertiarybutylphosphine (TBP), respectively. We found that the N mole fraction exhibits an Arrhenius behavior characterized by an activation energy of (0.79 ± 0.05) eV. With respect to the fluxes, we determined that the N mole fraction is linearly proportional to the flux of DMHy and inversely proportional to the one of TBP. All results are summarized in a universal equation that describes the dependence of x on the growth temperature and the fluxes of the group-V precursors. The results are further illustrated in a growth diagram that visualizes the variation of x as the growth temperature and the flux of DMHy are varied. This diagram also shows how to obtain single-phase and flat GaP1-xNx layers, as certain growth conditions result in chemically phase-separated layers with rough surface morphologies. Finally, our results demonstrate the feasibility of chemical beam epitaxy to obtain single-phase and flat GaP1-xNx layers with x up to about 0.04, a value well above the one required for the lattice-matched integration of GaP1-xNx-based devices on Si
publishDate 2021
dc.date.none.fl_str_mv 2021
2021-12-06
dc.type.none.fl_str_mv research article
http://purl.org/coar/resource_type/c_2df8fbb1
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10486/704353
https://dx.doi.org/10.1063/5.0067209
url http://hdl.handle.net/10486/704353
https://dx.doi.org/10.1063/5.0067209
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Biblos-e Archivo. Repositorio Institucional de la UAM
instname:Universidad Autónoma de Madrid
instname_str Universidad Autónoma de Madrid
reponame_str Biblos-e Archivo. Repositorio Institucional de la UAM
collection Biblos-e Archivo. Repositorio Institucional de la UAM
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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