Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
The following article appeared in Journal of Applied Physics 126.10 (2019): 105704 and may be found at https://aip.scitation.org/doi/full/10.1063/1.5111090
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/706128 |
| Acceso en línea: | http://hdl.handle.net/10486/706128 https://dx.doi.org/10.1063/1.5111090 |
| Access Level: | acceso abierto |
| Palabra clave: | III-V Semiconductors Gallium Arsenides Semiconductor Quantum Wells Física |
| Sumario: | The following article appeared in Journal of Applied Physics 126.10 (2019): 105704 and may be found at https://aip.scitation.org/doi/full/10.1063/1.5111090 |
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