Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001)
We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally ( 001 ) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of sampl...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/714913 |
| Acceso en línea: | http://hdl.handle.net/10486/714913 https://dx.doi.org/10.1063/5.0173748 |
| Access Level: | acceso abierto |
| Palabra clave: | Gallium phosphide III-V semiconductors optoelectronic devices phase separation silicon surface morphology Física |
| Sumario: | We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally ( 001 ) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04 , it is possible to synthesize smooth and chemically homogeneous GaP 1 − x N x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 } -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent ( 113 ) and ( 1 ¯ 1 ¯ 3 ) . On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − x N x layers lattice matched to Si ( x = 0.021 ) or even with N content up to x = 0.04 . The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition |
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