A growth diagram for chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates
The compound GaP1-xNx is highly attractive to pseudomorphically integrate red-light emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with a direct bandgap energy of ≈1.96 eV for x = 0.021. Here, we report on the chemical beam epitaxy of GaP1...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/704353 |
| Acceso en línea: | http://hdl.handle.net/10486/704353 https://dx.doi.org/10.1063/5.0067209 |
| Access Level: | acceso abierto |
| Palabra clave: | Dimethylhydrazine Growth Diagrams Lattice-Matched Light-Emitting Device Molefraction Red Light Si Substrates Si-Technology Single Phasis Tertiarybutylphosphine Física |
| Sumario: | The compound GaP1-xNx is highly attractive to pseudomorphically integrate red-light emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with a direct bandgap energy of ≈1.96 eV for x = 0.021. Here, we report on the chemical beam epitaxy of GaP1-xNx alloys on nominally (001)-oriented GaP-on-Si substrates. The incorporation of N into GaP1-xNx was systematically investigated as a function of growth temperature and the fluxes of the N and P precursors, 1,1-dimethylhydrazine (DMHy) and tertiarybutylphosphine (TBP), respectively. We found that the N mole fraction exhibits an Arrhenius behavior characterized by an activation energy of (0.79 ± 0.05) eV. With respect to the fluxes, we determined that the N mole fraction is linearly proportional to the flux of DMHy and inversely proportional to the one of TBP. All results are summarized in a universal equation that describes the dependence of x on the growth temperature and the fluxes of the group-V precursors. The results are further illustrated in a growth diagram that visualizes the variation of x as the growth temperature and the flux of DMHy are varied. This diagram also shows how to obtain single-phase and flat GaP1-xNx layers, as certain growth conditions result in chemically phase-separated layers with rough surface morphologies. Finally, our results demonstrate the feasibility of chemical beam epitaxy to obtain single-phase and flat GaP1-xNx layers with x up to about 0.04, a value well above the one required for the lattice-matched integration of GaP1-xNx-based devices on Si |
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