Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtain...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59302 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59302 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Silicon-Nitride Spectroscopy. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics. |
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