Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures
The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface state density, deep level transient spectroscopy (DLTS)...
| Autores: | , |
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| Formato: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59118 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/59118 |
| Access Level: | acceso abierto |
| Palavra-chave: | 537 Interface Devices Fabrication Model. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Resumo: | The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface state density, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. As for the dielectric composition, both the x = 0.97 and x = 1.43 values provide interfacial state density and DIGS damage values of the same order of magnitude. In the x = 0.97 case, RTA treatments reduce the insulator damage moving it towards the interface. In the x = 1.43 case this behavior is only observed for RTA temperatures lower than 500 degreesC. So, moderate temperature (<500<degrees>C) RTA treatments improve DIGS damage. This is an important result in terms of fabricating bi-layered metal-insulator-semiconductor (MIS) structures that not only have good-quality interfaces, but also good dielectric properties. |
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