Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures

Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced...

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Bibliographic Details
Authors: Prieto, Jose Antonio, Armelles Reig, Gaspar, Utzmeier, Thomas, Briones Fernández-Pola, Fernando, Ferrer, Juan Carlos, Peiró, F., Cornet, Albert, Morante, Joan Ramón
Format: article
Publication Date:1998
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/27413
Online Access:http://hdl.handle.net/10261/27413
Access Level:Open access
Keyword:Quantum dot structures
InSb
Description
Summary:Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E1 and E1+Δ1 transitions.

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