Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures

Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E 1 and E 1 + Δ 1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain prod...

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Detalles Bibliográficos
Autores: Prieto, J. A., Armelles Reig, G., Utzmeier, Thomas, Briones Fernández-Pola, Fernando, Ferrer, J. C., Peiró Martínez, Francisca, Cornet i Calveras, Albert, Morante i Lleonart, Joan Ramon
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1998
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/13168
Acceso en línea:https://hdl.handle.net/2445/13168
Access Level:acceso abierto
Palabra clave:Matèria condensada
Propietats òptiques
Electrònica quàntica
Condensed matter
Quantum electronics
Optical properties
Descripción
Sumario:Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E 1 and E 1 + Δ 1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E 1 and E 1 + Δ 1 transitions.

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