Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures
Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/27413 |
| Acceso en línea: | http://hdl.handle.net/10261/27413 |
| Access Level: | acceso abierto |
| Palabra clave: | Quantum dot structures InSb |
| Sumario: | Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E1 and E1+Δ1 transitions. |
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