Analytical predictive 2d modeling of pinch-off behavior in nanoscale multi-gate mosfets
In this thesis the pinch-off behavior in nanoscale Multi-Gate MOSFETs was reviewed and with compact models described. For this a 2D approach with Schwarz-Christoffel conformal mapping technique was used. A model to calculate the current in single gate MOSFETs was derived and compared to device simul...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | CBUC, CESCA |
| Repositorio: | TDR. Tesis Doctorales en Red |
| OAI Identifier: | oai:www.tdx.cat:10803/52800 |
| Acceso en línea: | http://hdl.handle.net/10803/52800 |
| Access Level: | acceso abierto |
| Palabra clave: | Modeling Nanoscale Multi-gate Mosfet 621.3 |
| Sumario: | In this thesis the pinch-off behavior in nanoscale Multi-Gate MOSFETs was reviewed and with compact models described. For this a 2D approach with Schwarz-Christoffel conformal mapping technique was used. A model to calculate the current in single gate MOSFETs was derived and compared to device simulations from TCAD Sentaurus down to 50nm. For the DoubleGate MOSFET a new way to define the saturation point was found. A fully 2D closed-form model to locate this point was created. It was also found that with quantum mechanics effects a pinch-off point can occur and can be described with the same model. Furthermore the model was extended to describe the coupled pinch-off points in an asymmetrical biased DoubleGate MOSET with an even an odd mode. Also the saturation point behavior in FinFETs was examinated. |
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