Study of growth hillocks in GaN : Si films by electron beam induced current imaging
Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2001 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59122 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59122 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Grain-Boundaries Física de materiales |
| Sumario: | Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks. |
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