Remote electron beam induced current imaging of electrically active regions in YBa_2Cu-3O_(7-x) single crystals
Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in YBa_2Cu_3O_(7-x) single crystals. Enhanced REBIC contrast, found in growth steps and other topographic features of the samples, is discussed in terms of charged oxygen-relate...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59152 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59152 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Superconducting Thin-Films Cathodoluminescence Microscopy Grain-Boundaries Física de materiales |
| Sumario: | Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in YBa_2Cu_3O_(7-x) single crystals. Enhanced REBIC contrast, found in growth steps and other topographic features of the samples, is discussed in terms of charged oxygen-related defects. The capability of REBIC to image structural inhomogeneities caused by strain or plastic deformation in these crystals is also established. Charge carrier diffusion length has been estimated at different temperatures from REBIC linescan profiles. |
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