Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate...
| Autores: | , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1995 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/99362 |
| Acesso em linha: | https://hdl.handle.net/2445/99362 |
| Access Level: | acceso abierto |
| Palavra-chave: | Silici Deposició química en fase vapor Pel·lícules fines Creixement cristal·lí Silicon Chemical vapor deposition Thin films Crystal growth |
| Resumo: | Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. |
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