P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition
P-doped polycrystalline silicon films were deposited over Corning 7059 substrates at a moderate temperature, 330°C, in a hot-wire reactor. The films were obtained from the decomposition of silane and hydrogen (10% SiH 4, 90% H 2) and different amounts of diborane. The structure and morphology of the...
| Autores: | , , , , , |
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| Formato: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 1995 |
| País: | España |
| Recursos: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/98758 |
| Acesso em linha: | https://hdl.handle.net/2445/98758 |
| Access Level: | acceso abierto |
| Palavra-chave: | Deposició química en fase vapor Pel·lícules fines Silici Chemical vapor deposition Thin films Silicon |
| Resumo: | P-doped polycrystalline silicon films were deposited over Corning 7059 substrates at a moderate temperature, 330°C, in a hot-wire reactor. The films were obtained from the decomposition of silane and hydrogen (10% SiH 4, 90% H 2) and different amounts of diborane. The structure and morphology of the samples were studied with X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). X-ray diffraction spectra show sharp diffraction peaks corresponding to silicon reflections, and Raman spectra show no evidence of amorphous phases and present a high intensity and narrow peak at 520 cm -1, which is the typical feature of crystalline silicon structure. The efficiency of boron incorporation was studied by secondary ion mass spectrometry (SIMS). The electrical properties of doped samples were also studied. |
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