Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate...
| Autores: | , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1995 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/99362 |
| Acceso en línea: | https://hdl.handle.net/2445/99362 |
| Access Level: | acceso abierto |
| Palabra clave: | Silici Deposició química en fase vapor Pel·lícules fines Creixement cristal·lí Silicon Chemical vapor deposition Thin films Crystal growth |
| Sumario: | Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. |
|---|