Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001)
We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally ( 001 ) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of sampl...
| Authors: | , , , , , |
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| Format: | article |
| Publication Date: | 2023 |
| Country: | España |
| Institution: | Universidad Autónoma de Madrid |
| Repository: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Language: | English |
| OAI Identifier: | oai:repositorio.uam.es:10486/714913 |
| Online Access: | http://hdl.handle.net/10486/714913 https://dx.doi.org/10.1063/5.0173748 |
| Access Level: | Open access |
| Keyword: | Gallium phosphide III-V semiconductors optoelectronic devices phase separation silicon surface morphology Física |
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Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001)Ben Saddik, KarimFernández Garrido, SergioVolkov, Roman L.Grandal, JavierBorgardt, Nickolay I.García Carretero, Basilio JavierGallium phosphideIII-V semiconductorsoptoelectronic devicesphase separationsiliconsurface morphologyFísicaWe investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally ( 001 ) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04 , it is possible to synthesize smooth and chemically homogeneous GaP 1 − x N x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 } -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent ( 113 ) and ( 1 ¯ 1 ¯ 3 ) . On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − x N x layers lattice matched to Si ( x = 0.021 ) or even with N content up to x = 0.04 . The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transitionThis work was supported by the former Ministerio de Ciencia, Innovación y Universidades (Project No. TEC2016-78433-R), the current Ministerio de Ciencia e Innovación (Project Nos. PID2020-114280RB-I00 and PID2020-117024GB-C42), and the Ministry of Science and Higher Education of the Russian Federation (State assignment No. FSMR-2020-0018 and FSMR-2023-0003). Additionally, S. Fernández-Garrido acknowledges the financial support received through the program Ramón y Cajal (co-financed by the European Social Fund) under Grant No. RYC-2016-19509 from Ministerio de Ciencia, Innovación y Universidades. We also acknowledge the service from the MiNa Laboratory at IMN and funding from CM (project S2018/NMT-4291 TEC2SPACE), MINECO (project CSIC13-4E-1794), and EU (FEDER, FSE)American Institute of Physics Inc.Departamento de Física AplicadaFacultad de CienciasElectrónica y Semiconductores (EXP C-032)20232023-11-02research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/714913https://dx.doi.org/10.1063/5.0173748reponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/7149132026-06-23T12:46:27Z |
| dc.title.none.fl_str_mv |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| title |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| spellingShingle |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) Ben Saddik, Karim Gallium phosphide III-V semiconductors optoelectronic devices phase separation silicon surface morphology Física |
| title_short |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| title_full |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| title_fullStr |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| title_full_unstemmed |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| title_sort |
Growth modes and chemical-phase separation in GaP1− x N x layers grown by chemical beam epitaxy on GaP/Si(001) |
| dc.creator.none.fl_str_mv |
Ben Saddik, Karim Fernández Garrido, Sergio Volkov, Roman L. Grandal, Javier Borgardt, Nickolay I. García Carretero, Basilio Javier |
| author |
Ben Saddik, Karim |
| author_facet |
Ben Saddik, Karim Fernández Garrido, Sergio Volkov, Roman L. Grandal, Javier Borgardt, Nickolay I. García Carretero, Basilio Javier |
| author_role |
author |
| author2 |
Fernández Garrido, Sergio Volkov, Roman L. Grandal, Javier Borgardt, Nickolay I. García Carretero, Basilio Javier |
| author2_role |
author author author author author |
| dc.contributor.none.fl_str_mv |
Departamento de Física Aplicada Facultad de Ciencias Electrónica y Semiconductores (EXP C-032) |
| dc.subject.none.fl_str_mv |
Gallium phosphide III-V semiconductors optoelectronic devices phase separation silicon surface morphology Física |
| topic |
Gallium phosphide III-V semiconductors optoelectronic devices phase separation silicon surface morphology Física |
| description |
We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally ( 001 ) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04 , it is possible to synthesize smooth and chemically homogeneous GaP 1 − x N x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 } -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent ( 113 ) and ( 1 ¯ 1 ¯ 3 ) . On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − x N x layers lattice matched to Si ( x = 0.021 ) or even with N content up to x = 0.04 . The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition |
| publishDate |
2023 |
| dc.date.none.fl_str_mv |
2023 2023-11-02 |
| dc.type.none.fl_str_mv |
research article http://purl.org/coar/resource_type/c_2df8fbb1 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10486/714913 https://dx.doi.org/10.1063/5.0173748 |
| url |
http://hdl.handle.net/10486/714913 https://dx.doi.org/10.1063/5.0173748 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ |
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openAccess |
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application/pdf |
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American Institute of Physics Inc. |
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American Institute of Physics Inc. |
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reponame:Biblos-e Archivo. Repositorio Institucional de la UAM instname:Universidad Autónoma de Madrid |
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Universidad Autónoma de Madrid |
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Biblos-e Archivo. Repositorio Institucional de la UAM |
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