Nanostructured MnGa films on Si/SiO2 with 20.5 kOe room temperature coercivity
Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC = 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered...
| Autores: | , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:107331 |
| Acceso en línea: | https://ddd.uab.cat/record/107331 https://dx.doi.org/urn:doi:10.1063/1.3656457 |
| Access Level: | acceso abierto |
| Palabra clave: | Materials Pel·lícules fines |
| Sumario: | Nanostructured Mn67Ga33 films exhibiting high room temperature coercivity (HC = 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest HC. The large HC is linked to the presence of the high anisotropy DO22 Mn3Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands. |
|---|