CoFe2O4/buffer layer ultrathin heterostructures on Si(001)
Epitaxial films of ferromagnetic CoFe2O4 (CFO) were grown by pulsed laser deposition on Si(001) buffered with ultrathin yttria-stabilized zirconia (YSZ) layers in a single process. Reflection high-energy electron diffraction was used to monitor in real time the crystallization of YSZ, allowing the f...
| Autores: | , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2011 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:107299 |
| Acesso em linha: | https://ddd.uab.cat/record/107299 https://dx.doi.org/urn:doi:10.1063/1.3651386 |
| Access Level: | acceso abierto |
| Palavra-chave: | Pel·lícules fines |
| Resumo: | Epitaxial films of ferromagnetic CoFe2O4 (CFO) were grown by pulsed laser deposition on Si(001) buffered with ultrathin yttria-stabilized zirconia (YSZ) layers in a single process. Reflection high-energy electron diffraction was used to monitor in real time the crystallization of YSZ, allowing the fabrication of epitaxial YSZ buffers with thickness of about 2 nm. CFO films, with thicknesses in the 2-50 nm range were subsequently deposited. The magnetization of the CFO films is close to the bulk value. The ultrathin CFO/YSZ heterostructures have very flat morphology (0.1 nm roughness) and thin interfacial SiOx layer (about 2 nm thick) making them suitable for integration in tunnel (e.g., spin injection) devices. |
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