Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17%) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal va...

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Detalhes bibliográficos
Autores: Sánchez Barrera, Florencio|||0000-0002-5314-453X, Bachelet, Romain, Coux, P. de, Warot-Fonrose, Bénédicte, Skumryev, Vassil Hristov|||0000-0003-1375-4824, Tarnawska, L., Zaumseil, P., Schroeder, T., Fontcuberta, Josep|||0000-0002-7955-2320
Tipo de documento: artigo
Data de publicação:2011
País:España
Recursos:Universitat Autònoma de Barcelona
Repositório:Dipòsit Digital de Documents de la UAB
Idioma:inglês
OAI Identifier:oai:ddd.uab.cat:107330
Acesso em linha:https://ddd.uab.cat/record/107330
https://dx.doi.org/urn:doi:10.1063/1.3663216
Access Level:Acceso aberto
Palavra-chave:Pel·lícules fines
Descrição
Resumo:Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17%) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 Å and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices.

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