Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Olea Ariza, Javier; González Díaz, Germán; Pastor Pastor, David; García Hemme, Eric; Caudevilla Gutiérrez, Daniel; Algaidy, Sari; Pérez Zenteno, Francisco José; Duarte Cano, Sebastián; García Hernansanz, Rodrigo; Prado Millán, Álvaro Del; San Andrés Serrano, Enrique; Martil De La Plaza, Ignacio

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the...

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Autores:	Olea Ariza, Javier, González Díaz, Germán, Pastor Pastor, David, García Hemme, Eric, Caudevilla Gutiérrez, Daniel, Algaidy, Sari, Pérez Zenteno, Francisco José, Duarte Cano, Sebastián, García Hernansanz, Rodrigo, Prado Millán, Álvaro Del, San Andrés Serrano, Enrique, Martil De La Plaza, Ignacio
Tipo de recurso:	artículo
Fecha de publicación:	2022
País:	España
Institución:	Universidad Complutense de Madrid (UCM)
Repositorio:	Docta Complutense
Idioma:	inglés
OAI Identifier:	oai:docta.ucm.es:20.500.14352/88773
Acceso en línea:	https://hdl.handle.net/20.500.14352/88773
Access Level:	acceso abierto
Palabra clave:	537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica

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spelling	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingOlea Ariza, JavierGonzález Díaz, GermánPastor Pastor, DavidGarcía Hemme, EricCaudevilla Gutiérrez, DanielAlgaidy, SariPérez Zenteno, Francisco JoséDuarte Cano, SebastiánGarcía Hernansanz, RodrigoPrado Millán, Álvaro DelSan Andrés Serrano, EnriqueMartil De La Plaza, Ignacio537DetectorHallHyperdopedInfraredSiliconSupersaturatedTitaniumElectricidadElectrónica (Física)2202.03 Electricidad2203 ElectrónicaIn the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the electronic transport properties at variable temperatures and analyzed the results. The results indicate that, for RTA samples, surface layers with a high Ti concentration have negligible conductivity due to defects. In contrast, the implantation tail region has measurable conductivity due to very high electron mobility. This region shows the activation of a very shallow donor and a deep donor level. While deep levels have been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer–Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work.IOP PublishingUniversidad Complutense de Madrid20222022-01-0120222022-01-01journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/88773reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)InglésengComunidad de Madrid http://dx.doi.org/10.13039/100012818 MADRID-PV S2018Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016 TEC2017-84378-RAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-116508RB-I00Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-117498RB-I00Ministerio de Ciencia e Innovación http://dx.doi.org/10.13039/501100004837 Not available PRE2018-083798CONACYT Not available 786327open accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/887732026-06-02T12:44:21Z
dc.title.none.fl_str_mv	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
title	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
spellingShingle	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting Olea Ariza, Javier 537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica
title_short	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
title_full	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
title_fullStr	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
title_full_unstemmed	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
title_sort	Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
dc.creator.none.fl_str_mv	Olea Ariza, Javier González Díaz, Germán Pastor Pastor, David García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián García Hernansanz, Rodrigo Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio
author	Olea Ariza, Javier
author_facet	Olea Ariza, Javier González Díaz, Germán Pastor Pastor, David García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián García Hernansanz, Rodrigo Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio
author_role	author
author2	González Díaz, Germán Pastor Pastor, David García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián García Hernansanz, Rodrigo Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio
author2_role	author author author author author author author author author author author
dc.contributor.none.fl_str_mv	Universidad Complutense de Madrid
dc.subject.none.fl_str_mv	537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica
topic	537 Detector Hall Hyperdoped Infrared Silicon Supersaturated Titanium Electricidad Electrónica (Física) 2202.03 Electricidad 2203 Electrónica
description	In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the electronic transport properties at variable temperatures and analyzed the results. The results indicate that, for RTA samples, surface layers with a high Ti concentration have negligible conductivity due to defects. In contrast, the implantation tail region has measurable conductivity due to very high electron mobility. This region shows the activation of a very shallow donor and a deep donor level. While deep levels have been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer–Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work.
publishDate	2022
dc.date.none.fl_str_mv	2022 2022-01-01 2022 2022-01-01
dc.type.none.fl_str_mv	journal article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	https://hdl.handle.net/20.500.14352/88773
url	https://hdl.handle.net/20.500.14352/88773
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.relation.none.fl_str_mv	Comunidad de Madrid http://dx.doi.org/10.13039/100012818 MADRID-PV S2018 Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016 TEC2017-84378-R Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-116508RB-I00 Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PID2020-117498RB-I00 Ministerio de Ciencia e Innovación http://dx.doi.org/10.13039/501100004837 Not available PRE2018-083798 CONACYT Not available 786327
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2 Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2 Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.publisher.none.fl_str_mv	IOP Publishing
publisher.none.fl_str_mv	IOP Publishing
dc.source.none.fl_str_mv	reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM)
instname_str	Universidad Complutense de Madrid (UCM)
reponame_str	Docta Complutense
collection	Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

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