Aging in CMOS RF linear power amplifiers
An extensive experimental analysis of the HCI and BTI aging effects on RF linear power amplifiers (PA) is presented in this paper. Two different 2.45 GHz PA topologies have been implemented in a CMOS 65 nm technology, one based on a classical common-source (CS) and choke inductor, another one based...
| Autores: | , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:248832 |
| Acceso en línea: | https://ddd.uab.cat/record/248832 https://dx.doi.org/urn:doi:10.1109/tmtt.2020.3041282 |
| Access Level: | acceso abierto |
| Palabra clave: | Radio frequency Stress Aging Transistors Degradation Integrated circuit modeling Human computer interaction |
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Aging in CMOS RF linear power amplifiersan experimental studyNafria, Montserrat|||0000-0002-9549-2890Martin Martinez, Javier|||0000-0001-5938-5898Crespo Yepes, Albert|||0000-0003-4618-651XRodríguez Martínez, Rosana|||0000-0002-4565-6703Barajas, Enrique|||0000-0002-2072-2268Mateo, Diego|||0000-0001-5996-9092Aragones, Xavier|||0000-0003-1352-8675Radio frequencyStressAgingTransistorsDegradationIntegrated circuit modelingHuman computer interactionAn extensive experimental analysis of the HCI and BTI aging effects on RF linear power amplifiers (PA) is presented in this paper. Two different 2.45 GHz PA topologies have been implemented in a CMOS 65 nm technology, one based on a classical common-source (CS) and choke inductor, another one based on a complementary current-reuse (CR) circuit, both of them producing similar gain and output 1-dB compression point (P-1dB). These circuits have been stressed to produce accelerated aging degradation, by applying increasing supply (VDD) voltages, or increasing RF input powers (PIN). The degradation on the transistor parameters (threshold voltage and mobility), DC bias point (IDC current) and RF performance (gain, matching, compression point) have been simultaneously measured. This has allowed to observe how the reduced transistor degradation in CR PA results in a higher robustness in its RF parameters, compared to CS PA circuit. The equivalent RMS voltages have been proposed as an observable metric to assess the combined DC+RF stress in a PA circuit. This has been applied to a semi-analytical model, thus providing comprehension of the link between the conditions under which a circuit is operated, the degradation of the transistor parameters, and the effects on the DC current and RF performance. 22021-01-0120212021-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/248832https://dx.doi.org/urn:doi:10.1109/tmtt.2020.3041282reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2016-75151-C3-RMinisterio de Ciencia e Innovación https://doi.org/10.13039/501100004837 PID2019-103869RB-C3open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2488322026-06-06T12:50:31Z |
| dc.title.none.fl_str_mv |
Aging in CMOS RF linear power amplifiers an experimental study |
| title |
Aging in CMOS RF linear power amplifiers |
| spellingShingle |
Aging in CMOS RF linear power amplifiers Nafria, Montserrat|||0000-0002-9549-2890 Radio frequency Stress Aging Transistors Degradation Integrated circuit modeling Human computer interaction |
| title_short |
Aging in CMOS RF linear power amplifiers |
| title_full |
Aging in CMOS RF linear power amplifiers |
| title_fullStr |
Aging in CMOS RF linear power amplifiers |
| title_full_unstemmed |
Aging in CMOS RF linear power amplifiers |
| title_sort |
Aging in CMOS RF linear power amplifiers |
| dc.creator.none.fl_str_mv |
Nafria, Montserrat|||0000-0002-9549-2890 Martin Martinez, Javier|||0000-0001-5938-5898 Crespo Yepes, Albert|||0000-0003-4618-651X Rodríguez Martínez, Rosana|||0000-0002-4565-6703 Barajas, Enrique|||0000-0002-2072-2268 Mateo, Diego|||0000-0001-5996-9092 Aragones, Xavier|||0000-0003-1352-8675 |
| author |
Nafria, Montserrat|||0000-0002-9549-2890 |
| author_facet |
Nafria, Montserrat|||0000-0002-9549-2890 Martin Martinez, Javier|||0000-0001-5938-5898 Crespo Yepes, Albert|||0000-0003-4618-651X Rodríguez Martínez, Rosana|||0000-0002-4565-6703 Barajas, Enrique|||0000-0002-2072-2268 Mateo, Diego|||0000-0001-5996-9092 Aragones, Xavier|||0000-0003-1352-8675 |
| author_role |
author |
| author2 |
Martin Martinez, Javier|||0000-0001-5938-5898 Crespo Yepes, Albert|||0000-0003-4618-651X Rodríguez Martínez, Rosana|||0000-0002-4565-6703 Barajas, Enrique|||0000-0002-2072-2268 Mateo, Diego|||0000-0001-5996-9092 Aragones, Xavier|||0000-0003-1352-8675 |
| author2_role |
author author author author author author |
| dc.subject.none.fl_str_mv |
Radio frequency Stress Aging Transistors Degradation Integrated circuit modeling Human computer interaction |
| topic |
Radio frequency Stress Aging Transistors Degradation Integrated circuit modeling Human computer interaction |
| description |
An extensive experimental analysis of the HCI and BTI aging effects on RF linear power amplifiers (PA) is presented in this paper. Two different 2.45 GHz PA topologies have been implemented in a CMOS 65 nm technology, one based on a classical common-source (CS) and choke inductor, another one based on a complementary current-reuse (CR) circuit, both of them producing similar gain and output 1-dB compression point (P-1dB). These circuits have been stressed to produce accelerated aging degradation, by applying increasing supply (VDD) voltages, or increasing RF input powers (PIN). The degradation on the transistor parameters (threshold voltage and mobility), DC bias point (IDC current) and RF performance (gain, matching, compression point) have been simultaneously measured. This has allowed to observe how the reduced transistor degradation in CR PA results in a higher robustness in its RF parameters, compared to CS PA circuit. The equivalent RMS voltages have been proposed as an observable metric to assess the combined DC+RF stress in a PA circuit. This has been applied to a semi-analytical model, thus providing comprehension of the link between the conditions under which a circuit is operated, the degradation of the transistor parameters, and the effects on the DC current and RF performance. |
| publishDate |
2021 |
| dc.date.none.fl_str_mv |
2 2021-01-01 2021 2021-01-01 |
| dc.type.none.fl_str_mv |
Article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
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article |
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https://ddd.uab.cat/record/248832 https://dx.doi.org/urn:doi:10.1109/tmtt.2020.3041282 |
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https://ddd.uab.cat/record/248832 https://dx.doi.org/urn:doi:10.1109/tmtt.2020.3041282 |
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Inglés eng |
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Inglés |
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eng |
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Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2016-75151-C3-R Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 PID2019-103869RB-C3 |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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openAccess |
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application/pdf |
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reponame:Dipòsit Digital de Documents de la UAB instname:Universitat Autònoma de Barcelona |
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