High sensitivity temperature measurements to track and Ccompensate aging effects on CMOS amplifiers

This article presents a method to monitor and compensate gain degradation produced by aging in linear CMOS amplifiers. The proposed procedure relies on a stand-alone temperature sensor circuit. DC measurements at the output of the temperature sensor allow to monitor high-frequency gain, and to selec...

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Detalles Bibliográficos
Autores: Mateo Peña, Diego|||0000-0001-5996-9092, Aragonès Cervera, Xavier|||0000-0003-1352-8675, Barajas Ojeda, Enrique|||0000-0002-2072-2268, Altet Sanahujes, Josep|||0000-0002-6939-6475
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/417222
Acceso en línea:https://hdl.handle.net/2117/417222
https://dx.doi.org/10.1109/TDMR.2024.3465236
Access Level:acceso abierto
Palabra clave:Temperature sensors
Temperature measurement
Gain
Monitoring
Degradation
Transistors
Power amplifiers
CMOS integrated circuits
Aging
Aging monitoring
Aging compensation
Temperature measurements
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
Descripción
Sumario:This article presents a method to monitor and compensate gain degradation produced by aging in linear CMOS amplifiers. The proposed procedure relies on a stand-alone temperature sensor circuit. DC measurements at the output of the temperature sensor allow to monitor high-frequency gain, and to select an adaptive biasing to keep a constant gain along the circuit lifetime. The approach is validated experimentally on a high-frequency Power Amplifier, which was subjected to an accelerated aging degradation. Experimental results demonstrate the capability to keep the amplifier gain within 0.3 dB from its fresh value, even after important device aging degradation.