Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation,...

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Detalhes bibliográficos
Autores: Rafí, Joan Marc, Simoen, E., Mercha, A., Hayama, K., Campabadal, Francesca, Ohyama, H., Claeys, C.
Formato: artículo
Fecha de publicación:2007
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/256988
Acesso em linha:http://hdl.handle.net/10261/256988
https://api.elsevier.com/content/abstract/scopus_id/34248655935
Access Level:acceso abierto
Palavra-chave:Hot-carrier degradation | MOSFETs | Partially-depleted SOI | Radiation-induced damage | Silicon on insulator
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spelling Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETsRafí, Joan MarcSimoen, E.Mercha, A.Hayama, K.Campabadal, FrancescaOhyama, H.Claeys, C.Hot-carrier degradation | MOSFETs | Partially-depleted SOI | Radiation-induced damage | Silicon on insulatorThe effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation, hot-electron trapping in the buried oxide is found to be enhanced in the irradiated devices. This hot-electron trapping leads to a compensation or neutralization of the effects caused by the radiation-induced positive trapped charges. It is shown that a similar hot-electron trapping enhancement can be achieved in non-irradiated devices stressed under certain back gate bias conditions. © 2007 Elsevier B.V. All rights reserved.Peer reviewed0000-0003-4581-9477Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212007info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/256988https://api.elsevier.com/content/abstract/scopus_id/34248655935reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésMicroelectronic Engineeringhttps://doi.org/10.1016/j.mee.2007.04.014Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2569882026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
title Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
spellingShingle Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
Rafí, Joan Marc
Hot-carrier degradation | MOSFETs | Partially-depleted SOI | Radiation-induced damage | Silicon on insulator
title_short Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
title_full Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
title_fullStr Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
title_full_unstemmed Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
title_sort Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
dc.creator.none.fl_str_mv Rafí, Joan Marc
Simoen, E.
Mercha, A.
Hayama, K.
Campabadal, Francesca
Ohyama, H.
Claeys, C.
author Rafí, Joan Marc
author_facet Rafí, Joan Marc
Simoen, E.
Mercha, A.
Hayama, K.
Campabadal, Francesca
Ohyama, H.
Claeys, C.
author_role author
author2 Simoen, E.
Mercha, A.
Hayama, K.
Campabadal, Francesca
Ohyama, H.
Claeys, C.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv 0000-0003-4581-9477
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Hot-carrier degradation | MOSFETs | Partially-depleted SOI | Radiation-induced damage | Silicon on insulator
topic Hot-carrier degradation | MOSFETs | Partially-depleted SOI | Radiation-induced damage | Silicon on insulator
description The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation, hot-electron trapping in the buried oxide is found to be enhanced in the irradiated devices. This hot-electron trapping leads to a compensation or neutralization of the effects caused by the radiation-induced positive trapped charges. It is shown that a similar hot-electron trapping enhancement can be achieved in non-irradiated devices stressed under certain back gate bias conditions. © 2007 Elsevier B.V. All rights reserved.
publishDate 2007
dc.date.none.fl_str_mv 2007
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/256988
https://api.elsevier.com/content/abstract/scopus_id/34248655935
url http://hdl.handle.net/10261/256988
https://api.elsevier.com/content/abstract/scopus_id/34248655935
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Microelectronic Engineering
https://doi.org/10.1016/j.mee.2007.04.014
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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