Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explain...
| Autor: | |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/23154 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/23154 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Charge-density-wave Phase-transition Semiconductor surface Superconductivity Sn/Ge(Iii) Order Metal Física de materiales |
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Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶BAbuín Herráez, Manuel538.9Charge-density-wavePhase-transitionSemiconductor surfaceSuperconductivitySn/Ge(Iii)OrderMetalFísica de materialesDynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.American Physical SocietyUniversidad Complutense de Madrid20152015-05-1320152015-05-13journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/23154reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/231542026-06-02T12:44:21Z |
| dc.title.none.fl_str_mv |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| title |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| spellingShingle |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B Abuín Herráez, Manuel 538.9 Charge-density-wave Phase-transition Semiconductor surface Superconductivity Sn/Ge(Iii) Order Metal Física de materiales |
| title_short |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| title_full |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| title_fullStr |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| title_full_unstemmed |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| title_sort |
Ultrafast atomic diffusion inducing a reversible (2√3x2√3) R30º ↔ (√3x√3) R30º transition on Sn/Si (111)∶B |
| dc.creator.none.fl_str_mv |
Abuín Herráez, Manuel |
| author |
Abuín Herráez, Manuel |
| author_facet |
Abuín Herráez, Manuel |
| author_role |
author |
| dc.contributor.none.fl_str_mv |
Universidad Complutense de Madrid |
| dc.subject.none.fl_str_mv |
538.9 Charge-density-wave Phase-transition Semiconductor surface Superconductivity Sn/Ge(Iii) Order Metal Física de materiales |
| topic |
538.9 Charge-density-wave Phase-transition Semiconductor surface Superconductivity Sn/Ge(Iii) Order Metal Física de materiales |
| description |
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states. |
| publishDate |
2015 |
| dc.date.none.fl_str_mv |
2015 2015-05-13 2015 2015-05-13 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/20.500.14352/23154 |
| url |
https://hdl.handle.net/20.500.14352/23154 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
open access http://purl.org/coar/access_right/c_abf2 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
American Physical Society |
| publisher.none.fl_str_mv |
American Physical Society |
| dc.source.none.fl_str_mv |
reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM) |
| instname_str |
Universidad Complutense de Madrid (UCM) |
| reponame_str |
Docta Complutense |
| collection |
Docta Complutense |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
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1869408082617958400 |
| score |
15,301603 |