Ultrafast atomic diffusion inducing a reversible (2√3x2√3)R30º <--> (√3x√3)R30º transition on Sn/Si (111): B
Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250°C. This phase transition is explained by th...
| Autores: | , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/674129 |
| Acceso en línea: | http://hdl.handle.net/10486/674129 https://dx.doi.org/10.1103/PhysRevLett.114.196101 |
| Access Level: | acceso abierto |
| Palabra clave: | Ground state Quantum theory Diffusive mechanisms Dynamical phase transition Quantum mechanical Surface units Física |
| Sumario: | Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250°C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states |
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