Gate-Level Design Methodology for Side-Channel Resistant Logic Styles Using TFETs

The design of secure circuits in emerging technologies is an appealing area that requires new efforts and attention as an effective solution to secure applications with power constraints. The paper deals with the optimized design of DPA-resilient hiding-based techniques, using Tunnel Field-Effect Tr...

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Detalles Bibliográficos
Autores: Delgado Lozano, Ignacio María, Tena Sánchez, Erica, Núñez Martínez, Juan, Acosta Jiménez, Antonio José
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2021
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/127021
Acceso en línea:https://hdl.handle.net/11441/127021
https://doi.org/10.1109/LES.2021.3122395
Access Level:acceso abierto
Palabra clave:VLSI design of cryptographic circuits
side-channel attacks (SCAs)
information security
low-power
dual precharge logic (DPL)
substitution box (Sbox)
sense amplifier based logic (SABL)
emerging technologies
TFET
Descripción
Sumario:The design of secure circuits in emerging technologies is an appealing area that requires new efforts and attention as an effective solution to secure applications with power constraints. The paper deals with the optimized design of DPA-resilient hiding-based techniques, using Tunnel Field-Effect Transistors (TFETs). Specifically, proposed TFET implementations of Dual-Precharge-Logic primitives optimizing their computation tree in three different ways, are applied to the design of PRIDE Sbox-4, the most vulnerable block of the PRIDE lightweight cipher. The performance of simulation-based DPA attacks on the proposals have shown spectacular results in security gain (34 out of 48 attacks fail for optimized computation trees in TFET technology) and power reduction (x25), compared to their CMOS-based counterparts in 65nm, which is a significant advance in the development of secure circuits with TFETs.