Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron mi...

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Detalhes bibliográficos
Autores: Cifre, J., Bertomeu i Balagueró, Joan, Puigdollers i González, Joaquim, Polo Trasancos, Ma. del Carmen, Andreu i Batallé, Jordi, Lloret, A.
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:1994
País:España
Recursos:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/98753
Acesso em linha:https://hdl.handle.net/2445/98753
Access Level:acceso abierto
Palavra-chave:Pel·lícules fines
Silici
Deposició en fase de vapor
Thin films
Silicon
Vapor-plating
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repository_id_str
spelling Polycrystalline silicon films obtained by hot-wire chemical vapour depositionCifre, J.Bertomeu i Balagueró, JoanPuigdollers i González, JoaquimPolo Trasancos, Ma. del CarmenAndreu i Batallé, JordiLloret, A.Pel·lícules finesSiliciDeposició en fase de vaporThin filmsSiliconVapor-platingSilicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.Springer Verlag2016201619942016info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion7 p.application/pdfhttps://hdl.handle.net/2445/98753Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: http://dx.doi.org/10.1007/BF00331926Applied Physics A: Materials Science and Processing , 1994, vol. 59, num. 6, p. 645-651http://dx.doi.org/10.1007/BF00331926(c) Springer Verlag, 1994info:eu-repo/semantics/openAccessoai:recercat.cat:2445/987532026-05-29T05:05:01Z
dc.title.none.fl_str_mv Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
spellingShingle Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Cifre, J.
Pel·lícules fines
Silici
Deposició en fase de vapor
Thin films
Silicon
Vapor-plating
title_short Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_full Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_fullStr Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_full_unstemmed Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
title_sort Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
dc.creator.none.fl_str_mv Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Polo Trasancos, Ma. del Carmen
Andreu i Batallé, Jordi
Lloret, A.
author Cifre, J.
author_facet Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Polo Trasancos, Ma. del Carmen
Andreu i Batallé, Jordi
Lloret, A.
author_role author
author2 Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Polo Trasancos, Ma. del Carmen
Andreu i Batallé, Jordi
Lloret, A.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Pel·lícules fines
Silici
Deposició en fase de vapor
Thin films
Silicon
Vapor-plating
topic Pel·lícules fines
Silici
Deposició en fase de vapor
Thin films
Silicon
Vapor-plating
description Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.
publishDate 1994
dc.date.none.fl_str_mv 1994
2016
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/98753
url https://hdl.handle.net/2445/98753
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1007/BF00331926
Applied Physics A: Materials Science and Processing , 1994, vol. 59, num. 6, p. 645-651
http://dx.doi.org/10.1007/BF00331926
dc.rights.none.fl_str_mv (c) Springer Verlag, 1994
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Springer Verlag, 1994
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 7 p.
application/pdf
dc.publisher.none.fl_str_mv Springer Verlag
publisher.none.fl_str_mv Springer Verlag
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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