Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

We present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(−3). The structural properties of these layers are found to be...

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Detalles Bibliográficos
Autores: Dhar, S., Pérez García, Lucas, Brandt, O., Trampert, A., Ploog, K. H., Keller, J., Beschoten, B.
Tipo de recurso: artículo
Fecha de publicación:2005
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/52144
Acceso en línea:https://hdl.handle.net/20.500.14352/52144
Access Level:acceso abierto
Palabra clave:538.9
Molecular-beam epitaxy
Exchange interactions
Layers
6H-SiC(0001)
Palladium
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
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oai_identifier_str oai:docta.ucm.es:20.500.14352/52144
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repository_id_str
spelling Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 KDhar, S.Pérez García, LucasBrandt, O.Trampert, A.Ploog, K. H.Keller, J.Beschoten, B.538.9Molecular-beam epitaxyExchange interactionsLayers6H-SiC(0001)PalladiumFísica de materialesFísica del estado sólido2211 Física del Estado SólidoWe present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(−3). The structural properties of these layers are found to be identical to those of undoped GaN layers. However, the magnetic characterization reveals an unprecedented effect. The average value of the magnetic moment per Gd atom is found to be as high as 4000 μ_(b) as compared to its atomic moment of 8 μ_(b). Such a colossal magnetic moment can be explained in terms of a long range spin polarization of the GaN matrix by the Gd atoms which is reflected by the circular polarization of magnetophotoluminescence measurements. Moreover, the material system is found to exhibit ferromagnetism well above room temperature in the entire concentration range under investigation. We propose a phenomenological model to understand the macroscopic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd. DAmerican Physical SocietyUniversidad Complutense de Madrid20052005-12-0120052005-12-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/52144reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/521442026-06-02T12:44:21Z
dc.title.none.fl_str_mv Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
title Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
spellingShingle Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
Dhar, S.
538.9
Molecular-beam epitaxy
Exchange interactions
Layers
6H-SiC(0001)
Palladium
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
title_full Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
title_fullStr Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
title_full_unstemmed Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
title_sort Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
dc.creator.none.fl_str_mv Dhar, S.
Pérez García, Lucas
Brandt, O.
Trampert, A.
Ploog, K. H.
Keller, J.
Beschoten, B.
author Dhar, S.
author_facet Dhar, S.
Pérez García, Lucas
Brandt, O.
Trampert, A.
Ploog, K. H.
Keller, J.
Beschoten, B.
author_role author
author2 Pérez García, Lucas
Brandt, O.
Trampert, A.
Ploog, K. H.
Keller, J.
Beschoten, B.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Molecular-beam epitaxy
Exchange interactions
Layers
6H-SiC(0001)
Palladium
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Molecular-beam epitaxy
Exchange interactions
Layers
6H-SiC(0001)
Palladium
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description We present a systematic study of growth, structural, and magnetic characterization of GaN:Gd layers grown directly on 6H-SiC(0001) substrates by reactive molecular-beam epitaxy with a Gd concentration ranging from 7x10^(15) to 2x1019 cm^(−3). The structural properties of these layers are found to be identical to those of undoped GaN layers. However, the magnetic characterization reveals an unprecedented effect. The average value of the magnetic moment per Gd atom is found to be as high as 4000 μ_(b) as compared to its atomic moment of 8 μ_(b). Such a colossal magnetic moment can be explained in terms of a long range spin polarization of the GaN matrix by the Gd atoms which is reflected by the circular polarization of magnetophotoluminescence measurements. Moreover, the material system is found to exhibit ferromagnetism well above room temperature in the entire concentration range under investigation. We propose a phenomenological model to understand the macroscopic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd. D
publishDate 2005
dc.date.none.fl_str_mv 2005
2005-12-01
2005
2005-12-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/52144
url https://hdl.handle.net/20.500.14352/52144
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869404695308533760
score 15,300724

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