Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties
Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier (CHC) degradation has been induced to provoke some...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:248842 |
| Acceso en línea: | https://ddd.uab.cat/record/248842 https://dx.doi.org/urn:doi:10.1016/j.sse.2021.108061 |
| Access Level: | acceso abierto |
| Palabra clave: | CHC Device level KPFM Nanoscale NBTI OTFTs Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry |
| Sumario: | Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier (CHC) degradation has been induced to provoke some damage in the studied devices. The results show that the use of the two KPFM configurations, together with their nanoscale resolution, provides additional information about the damage in the different regions/materials of the devices, allowing to correlate device level characteristics with the nanoscale material properties. |
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