Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability

A more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. These data were the input of a device s...

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Detalles Bibliográficos
Autores: Ruiz Flores, Ana|||0000-0002-2475-7353, Seoane, Natalia|||0000-0003-0973-461X, Claramunt, Sergi|||0000-0002-2888-7825, Garcia-Loureiro, Antonio|||0000-0003-0574-1513, Porti i Pujal, Marc|||0000-0001-7438-3823, Couso, Carlos|||0000-0003-4757-2439, Martin Martinez, Javier|||0000-0001-5938-5898, Nafria, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:249164
Acceso en línea:https://ddd.uab.cat/record/249164
https://dx.doi.org/urn:doi:10.1063/1.5090855
Access Level:acceso abierto
Palabra clave:KPFM
Polycrystalline metal gate
Variability
MOSFET
Descripción
Sumario:A more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. These data were the input of a device simulator, which allowed us to evaluate the effect of the workfunction fluctuations on MOSFET performance variability. We have demonstrated that in the modelling of TiN workfunction variability not only the different workfunctions of the grains but also the grain boundaries should be included.

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