Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

[EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh-frequency oscillations. Practical considerations, such as the limitations of the technological fabrication process and the...

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Autores: Garcia Sanchez, S., Íñiguez de la Torre Mulas, Ignacio, Pérez Santos, María Susana, González Sánchez, Tomás, Mateos López, Javier
Tipo de recurso: artículo
Estado:Versión borrador
Fecha de publicación:2022
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/167222
Acceso en línea:http://hdl.handle.net/10366/167222
Access Level:acceso abierto
Palabra clave:Doped gallium nitride(GaN)
Monte Carlo simulations
Gunn diodes
Terahertz (THz) generation
2203 Electrónica
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spelling Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn DiodesGarcia Sanchez, S.Íñiguez de la Torre Mulas, IgnacioPérez Santos, María SusanaGonzález Sánchez, TomásMateos López, JavierDoped gallium nitride(GaN)Monte Carlo simulationsGunn diodesTerahertz (THz) generation2203 Electrónica[EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh-frequency oscillations. Practical considerations, such as the limitations of the technological fabrication process and the mitigation of the huge self-heating effects expected to appear in the devices, have been also contem plated for the choice of the optimal epilayer parameters.The best results are obtained for an active layer thickness of 150 nmwith doping of 5 × 1018 cm−3, which would provide 350GHzGunnoscillationswhenusingacontactseparation of 0.5 μm.IEEE202520252022info:eu-repo/semantics/articleinfo:eu-repo/semantics/draftapplication/pdfhttp://hdl.handle.net/10366/167222reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésTEC2017-83910-RSA254P18NRF2017-NRF-ANR003Attribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1672222026-06-07T06:28:51Z
dc.title.none.fl_str_mv Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
title Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
spellingShingle Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
Garcia Sanchez, S.
Doped gallium nitride(GaN)
Monte Carlo simulations
Gunn diodes
Terahertz (THz) generation
2203 Electrónica
title_short Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
title_full Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
title_fullStr Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
title_full_unstemmed Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
title_sort Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
dc.creator.none.fl_str_mv Garcia Sanchez, S.
Íñiguez de la Torre Mulas, Ignacio
Pérez Santos, María Susana
González Sánchez, Tomás
Mateos López, Javier
author Garcia Sanchez, S.
author_facet Garcia Sanchez, S.
Íñiguez de la Torre Mulas, Ignacio
Pérez Santos, María Susana
González Sánchez, Tomás
Mateos López, Javier
author_role author
author2 Íñiguez de la Torre Mulas, Ignacio
Pérez Santos, María Susana
González Sánchez, Tomás
Mateos López, Javier
author2_role author
author
author
author
dc.subject.none.fl_str_mv Doped gallium nitride(GaN)
Monte Carlo simulations
Gunn diodes
Terahertz (THz) generation
2203 Electrónica
topic Doped gallium nitride(GaN)
Monte Carlo simulations
Gunn diodes
Terahertz (THz) generation
2203 Electrónica
description [EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh-frequency oscillations. Practical considerations, such as the limitations of the technological fabrication process and the mitigation of the huge self-heating effects expected to appear in the devices, have been also contem plated for the choice of the optimal epilayer parameters.The best results are obtained for an active layer thickness of 150 nmwith doping of 5 × 1018 cm−3, which would provide 350GHzGunnoscillationswhenusingacontactseparation of 0.5 μm.
publishDate 2022
dc.date.none.fl_str_mv 2022
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/draft
format article
status_str draft
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/167222
url http://hdl.handle.net/10366/167222
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv TEC2017-83910-R
SA254P18
NRF2017-NRF-ANR003
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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