Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact
[EN]Impact ionization originated by the buffer leakage current, together with high electric fields (>3 MVcm−1) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of Gunn oscillati...
| Autores: | , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión borrador |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/167239 |
| Acceso en línea: | http://hdl.handle.net/10366/167239 |
| Access Level: | acceso abierto |
| Palabra clave: | Doped GaN Gunn diodes Monte Carlo simulations THz generation 2203 Electrónica |
| Sumario: | [EN]Impact ionization originated by the buffer leakage current, together with high electric fields (>3 MVcm−1) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of Gunn oscillations in fabricated devices has been observed yet. In order to avoid the avalanche, we propose the addition of a Schottky substrate terminal, which, by means of Monte Carlo simulations, has been confirmed to be able to suppress such not-desired leakage current when applying a negative substrate bias. When the substrate bias is positive, impact ionization is also reduced due to the lower electric field at the hotspot, but a vertical cathode-substrate current degrades the device operation. In order to avoid such current, we propose the use a MIS configuration for the substrate contact, which is the optimal solution. |
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