Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
[EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh-frequency oscillations. Practical considerations, such as the limitations of the technological fabrication process and the...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión borrador |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/167222 |
| Acceso en línea: | http://hdl.handle.net/10366/167222 |
| Access Level: | acceso abierto |
| Palabra clave: | Doped gallium nitride(GaN) Monte Carlo simulations Gunn diodes Terahertz (THz) generation 2203 Electrónica |
| Sumario: | [EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh-frequency oscillations. Practical considerations, such as the limitations of the technological fabrication process and the mitigation of the huge self-heating effects expected to appear in the devices, have been also contem plated for the choice of the optimal epilayer parameters.The best results are obtained for an active layer thickness of 150 nmwith doping of 5 × 1018 cm−3, which would provide 350GHzGunnoscillationswhenusingacontactseparation of 0.5 μm. |
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