Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN
[EN]With the aim of producing free-running Gunn oscillations in GaN devices, we propose the use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an AlGaN/GaN heterojunction. To this...
| Autores: | , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/144054 |
| Acceso en línea: | http://hdl.handle.net/10366/144054 |
| Access Level: | acceso abierto |
| Palabra clave: | Gunn diodes Doped GaN Monte Carlo method |
| Sumario: | [EN]With the aim of producing free-running Gunn oscillations in GaN devices, we propose the use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an AlGaN/GaN heterojunction. To this aim, efforts at different levels are being made in order to optimize the material growth, processing, simulation and design of the devices. |
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