High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are...
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| Formato: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/34692 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/34692 |
| Access Level: | acceso abierto |
| Palavra-chave: | 537 Interface-trap density Numerical-simulation Germanium Ge_(1-x)Sn_(x). Electricidad Electrónica (Física) 2202.03 Electricidad |
| Resumo: | We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350°C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5nm Al_(2)O_(3), 5nm HfO_(2) or 1nm Al_(2)O_(3)/4nm HfO_(2), on strained Ge and strained Ge_(0.94)Sn_(0.06). Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations. |
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