Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities

This article is part of a Special issue entitled: ‘NanoProcess 2024’ published in Micro and Nano Engineering

Detalhes bibliográficos
Autores: Scattolo, E., Cian, Alessandro, Llobet, Jordi, Borrisé, Xavier, Mondal, S., Barozzi, M., Bagolini, A., Crivellari, M., Perez Murano, Francesc X., Giubertoni, Damiano
Tipo de documento: artigo
Estado:Versão publicada
Data de publicação:2025
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositório:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/399441
Acesso em linha:http://hdl.handle.net/10261/399441
https://api.elsevier.com/content/abstract/scopus_id/105009462874
Access Level:Acceso aberto
Palavra-chave:Maskless
Nanofabrication
Silicon nanowires
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spelling Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilitiesScattolo, E.Cian, AlessandroLlobet, JordiBorrisé, XavierMondal, S.Barozzi, M.Bagolini, A.Crivellari, M.Perez Murano, Francesc X.Giubertoni, DamianoMasklessNanofabricationSilicon nanowiresThis article is part of a Special issue entitled: ‘NanoProcess 2024’ published in Micro and Nano EngineeringSilicon nanofabrication plays a crucial role in the development of advanced electronic, photonic, and quantum devices. Focused ion beam (FIB) milling is widely used for direct patterning at the nanoscale, but it requires high ion fluences, leading to long processing times, material redeposition, and increased contamination. In this work, we demonstrate an alternative FIB-based approach that relies on gold ion implantation at significantly lower fluences, enabling selective silicon etching while minimizing these drawbacks. Gold ions (Au<sup>+</sup>) were implanted into silicon substrates with a kinetic energy of 35 keV, followed by wet etching in tetramethylammonium hydroxide (TMAH). We identified the process window of Au fluences between 1 × 10<sup>15</sup> and 1 × 10<sup>17</sup> ions/cm<sup>2</sup>, with secondary ion mass spectrometry (SIMS) confirming an Au concentration threshold of 3.5 × 10<sup>20</sup> atoms/cm<sup>3</sup> necessary to sustain etching resistance, value predicted also by Monte Carlo simulations (TRIDYN). This approach enables the fabrication of suspended silicon nanowires with a minimum width of 36 nm, a thickness of 20 nm, and lengths up to 8 μm, achieving aspect ratios exceeding 400, as well as more complex suspended structures likes nets which can be targeted for applications in nanoelectromechanical systems (NEMS) reaching nanowire width over pitch down to 2 %. The proposed method presents a promising alternative to conventional silicon patterning, significantly reducing processing complexity while enhancing nanostructure resolution. The results provide new insights into ion-implantation-assisted etching mechanisms and expand the possibilities for silicon nanostructure fabrication.Peer reviewedElsevierBorrisé, Xavier [0000-0002-6491-4763]Perez Murano, Francesc X. [0000-0002-4647-8558]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/399441https://api.elsevier.com/content/abstract/scopus_id/105009462874reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1016/j.mne.2025.100308Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3994412026-05-22T06:33:51Z
dc.title.none.fl_str_mv Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
title Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
spellingShingle Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
Scattolo, E.
Maskless
Nanofabrication
Silicon nanowires
title_short Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
title_full Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
title_fullStr Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
title_full_unstemmed Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
title_sort Silicon selective etching by gold implantation: Feasibility and nanofabrication capabilities
dc.creator.none.fl_str_mv Scattolo, E.
Cian, Alessandro
Llobet, Jordi
Borrisé, Xavier
Mondal, S.
Barozzi, M.
Bagolini, A.
Crivellari, M.
Perez Murano, Francesc X.
Giubertoni, Damiano
author Scattolo, E.
author_facet Scattolo, E.
Cian, Alessandro
Llobet, Jordi
Borrisé, Xavier
Mondal, S.
Barozzi, M.
Bagolini, A.
Crivellari, M.
Perez Murano, Francesc X.
Giubertoni, Damiano
author_role author
author2 Cian, Alessandro
Llobet, Jordi
Borrisé, Xavier
Mondal, S.
Barozzi, M.
Bagolini, A.
Crivellari, M.
Perez Murano, Francesc X.
Giubertoni, Damiano
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Borrisé, Xavier [0000-0002-6491-4763]
Perez Murano, Francesc X. [0000-0002-4647-8558]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Maskless
Nanofabrication
Silicon nanowires
topic Maskless
Nanofabrication
Silicon nanowires
description This article is part of a Special issue entitled: ‘NanoProcess 2024’ published in Micro and Nano Engineering
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/399441
https://api.elsevier.com/content/abstract/scopus_id/105009462874
url http://hdl.handle.net/10261/399441
https://api.elsevier.com/content/abstract/scopus_id/105009462874
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1016/j.mne.2025.100308
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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