Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation
We present the fabrication of silicon nanowire (SiNW) mechanical resonators by a resistless process based on focused ion beam local gallium implantation, selective silicon etching and diffusive boron doping. Suspended, doubly clamped SiNWs fabricated by this process presents a good electrical conduc...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:270829 |
| Acceso en línea: | https://ddd.uab.cat/record/270829 https://dx.doi.org/urn:doi:10.1088/0957-4484/25/13/135302 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanofabrication Silicon nanowires Electrical transduction FIB gallium implantation NEMS |
| Sumario: | We present the fabrication of silicon nanowire (SiNW) mechanical resonators by a resistless process based on focused ion beam local gallium implantation, selective silicon etching and diffusive boron doping. Suspended, doubly clamped SiNWs fabricated by this process presents a good electrical conductivity which enables the electrical read-out of the SiNW oscillation. During the fabrication process, gallium implantation induces the amorphization of silicon that, together with the incorporation of gallium into the irradiated volume, increases the electrical resistivity to values higher than 3 Ω m, resulting in an unacceptably high resistance for electrical transduction. We show that the conductivity of the SiNWs can be restored by performing a high temperature doping process, which allows us to recover the crystalline structure of the silicon and to achieve a controlled resistivity of the structures. Raman spectroscopy and TEM microscopy are used to characterize the recovery of crystallinity, while electrical measurements show a resistivity of 10 Ω m. This resistivity allows to obtain excellent electromechanical transduction, which is employed to characterize the high frequency mechanical response by electrical methods. |
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