Tailored height gradients in vertical nanowire arrays via mechanical and electronic modulation of metal-assisted chemical etching

In current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or...

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Detalles Bibliográficos
Autores: Otte Ortiz, Marinus Albertus, Solís Tinoco, Verónica Iraís|||0000-0001-8797-7559, Prieto Recio, Pilar|||0000-0001-8978-5139, Borrisé, Xavier|||0000-0002-6491-4763, Lechuga, Laura M|||0000-0001-5187-5358, González, María Ujué|||0000-0001-7012-0049, Sepúlveda, Borja|||0000-0002-1562-7602
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:212906
Acceso en línea:https://ddd.uab.cat/record/212906
https://dx.doi.org/urn:doi:10.1002/smll.201500175
Access Level:acceso abierto
Palabra clave:Nanofabrication
Height gradients
High aspect- ratio vertical nanowires
Metal assisted chemical etching
Metamaterials
Descripción
Sumario:In current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or etching techniques, is usually uniform, and on-chip variation of this parameter is difficult and generally limited to very simple patterns. Herein, a novel nanofabrication methodology is presented, which enables the generation of high aspect-ratio nanostructure arrays with height gradients in arbitrary directions by a single and fast etching process. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how nanostructure arrays with directional height gradients can be accurately tailored by: (i) the control of the mass transport through the nanohole array, (ii) the mechanical properties of the perforated metal layer, and (iii) the conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20-fold on-chip variation of nanostructure height in a spatial range of a few micrometers, offers a new tool for the creation of novel types of nano-assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how high aspect-ratio nanostructure arrays with directional height gradients can be accurately tailored by: i) control of mass transport through the nanohole array, ii) mechanical properties of the perforated metal layer, and iii) conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20- -fold on- -chip variation of nanostructure height in a spatial range of a few microns, offers a new tool for the creation of novel types of nano- -assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics.