Exploration of alternative gate dielectric materials for RADFET sensors

RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO<inf>2</inf>-based g...

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Autores: Amat, Esteve, Martínez Domingo, Carme, Fleta, Celeste, Mas Torrent, Marta, Santos Lozano, M. Asunción
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/396533
Acceso en línea:http://hdl.handle.net/10261/396533
https://api.elsevier.com/content/abstract/scopus_id/105008174865
Access Level:acceso abierto
Palabra clave:Gate dielectrics
MOSFETs
RADFETs
Radiation sensors
id ES_0986c5bb9f00b2dd6d0f4cfd9d089c3e
oai_identifier_str oai:digital.csic.es:10261/396533
network_acronym_str ES
network_name_str España
repository_id_str
spelling Exploration of alternative gate dielectric materials for RADFET sensorsAmat, EsteveMartínez Domingo, CarmeFleta, CelesteMas Torrent, MartaSantos Lozano, M. AsunciónGate dielectricsMOSFETsRADFETsRadiation sensorsRADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO<inf>2</inf>-based gate dielectric in order to improve the device performance. Electrical characterization in irradiated samples has been carried on to study the radiation response of each material to low levels of ionizing radiation. The HfO<inf>2</inf>-based samples have a much higher sensitivity per unit thickness than the SiO<inf>2</inf>-based ones. High-K based RADFETs show promising performance as gate dielectrics for future silicon based radiation sensors.This work received funding from the European Union’s H2020 research and innovation program under grant agreement N° 101018596 (NEST). C.M. and M.M. acknowledge funds from MCIN/AEI/10.13039/501100011033/ERDF, UE with projects SENSATION PID2022-141393OB-I00 and PDC2022-133750-I00, and the “Severo Ochoa” Program for Excellence Centers in R&D (CEX2023-001263-S).With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2023-001263-S).Peer reviewedElsevierEuropean CommissionMinisterio de Ciencia e Innovación (España)Agencia Estatal de Investigación (España)Amat, Esteve [0000-0001-9214-0331]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/396533https://api.elsevier.com/content/abstract/scopus_id/105008174865reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/H2020/101018596info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-141393OB-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PDC2022-133750-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-SNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomshttp://doi.org/10.1016/j.nimb.2025.165775Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3965332026-05-22T06:33:51Z
dc.title.none.fl_str_mv Exploration of alternative gate dielectric materials for RADFET sensors
title Exploration of alternative gate dielectric materials for RADFET sensors
spellingShingle Exploration of alternative gate dielectric materials for RADFET sensors
Amat, Esteve
Gate dielectrics
MOSFETs
RADFETs
Radiation sensors
title_short Exploration of alternative gate dielectric materials for RADFET sensors
title_full Exploration of alternative gate dielectric materials for RADFET sensors
title_fullStr Exploration of alternative gate dielectric materials for RADFET sensors
title_full_unstemmed Exploration of alternative gate dielectric materials for RADFET sensors
title_sort Exploration of alternative gate dielectric materials for RADFET sensors
dc.creator.none.fl_str_mv Amat, Esteve
Martínez Domingo, Carme
Fleta, Celeste
Mas Torrent, Marta
Santos Lozano, M. Asunción
author Amat, Esteve
author_facet Amat, Esteve
Martínez Domingo, Carme
Fleta, Celeste
Mas Torrent, Marta
Santos Lozano, M. Asunción
author_role author
author2 Martínez Domingo, Carme
Fleta, Celeste
Mas Torrent, Marta
Santos Lozano, M. Asunción
author2_role author
author
author
author
dc.contributor.none.fl_str_mv European Commission
Ministerio de Ciencia e Innovación (España)
Agencia Estatal de Investigación (España)
Amat, Esteve [0000-0001-9214-0331]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Gate dielectrics
MOSFETs
RADFETs
Radiation sensors
topic Gate dielectrics
MOSFETs
RADFETs
Radiation sensors
description RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO<inf>2</inf>-based gate dielectric in order to improve the device performance. Electrical characterization in irradiated samples has been carried on to study the radiation response of each material to low levels of ionizing radiation. The HfO<inf>2</inf>-based samples have a much higher sensitivity per unit thickness than the SiO<inf>2</inf>-based ones. High-K based RADFETs show promising performance as gate dielectrics for future silicon based radiation sensors.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/396533
https://api.elsevier.com/content/abstract/scopus_id/105008174865
url http://hdl.handle.net/10261/396533
https://api.elsevier.com/content/abstract/scopus_id/105008174865
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/H2020/101018596
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-141393OB-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PDC2022-133750-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-S
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
http://doi.org/10.1016/j.nimb.2025.165775
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869403111139835904
score 15,811543

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