Exploration of alternative gate dielectric materials for RADFET sensors
RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO<inf>2</inf>-based g...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/396533 |
| Acceso en línea: | http://hdl.handle.net/10261/396533 https://api.elsevier.com/content/abstract/scopus_id/105008174865 |
| Access Level: | acceso abierto |
| Palabra clave: | Gate dielectrics MOSFETs RADFETs Radiation sensors |
| Sumario: | RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO<inf>2</inf>-based gate dielectric in order to improve the device performance. Electrical characterization in irradiated samples has been carried on to study the radiation response of each material to low levels of ionizing radiation. The HfO<inf>2</inf>-based samples have a much higher sensitivity per unit thickness than the SiO<inf>2</inf>-based ones. High-K based RADFETs show promising performance as gate dielectrics for future silicon based radiation sensors. |
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