Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at hi...

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Bibliographic Details
Authors: Martil De La Plaza, Ignacio, García Hemme, Eric, García Hernansanz, Rodrigo, González Díaz, Germán, Olea Ariza, Javier, Prado Millán, Álvaro Del
Format: book part
Publication Date:2013
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/45518
Online Access:https://hdl.handle.net/20.500.14352/45518
Access Level:Open access
Keyword:537
Amorphous Semiconductors
Chemical Vapour Deposition
Elemental Semiconductors
Energy Gap
Semiconductor Thin Films
Silicon
Solar Cells
Sputter Deposition
Efficiency. silicon solar cells sputter deposition
Electricidad
Electrónica (Física)
2202.03 Electricidad
Description
Summary:Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

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