Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on 〈1 1 1〉 silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, trans...

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Bibliographic Details
Authors: de Andrade, Maria Glória Caño [UNESP], Nogueira, Carlos Roberto [UNESP], Júnior, Nilton Graciano [UNESP], Doria, Rodrigo T., Trevisoli, Renan, Simoen, Eddy
Format: article
Status:Published version
Publication Date:2024
Country:Brasil
Institution:Universidade Estadual Paulista (UNESP)
Repository:Repositório Institucional da UNESP
Language:English
OAI Identifier:oai:repositorio.unesp.br:11449/307671
Online Access:http://dx.doi.org/10.1016/j.sse.2023.108807
https://hdl.handle.net/11449/307671
Access Level:Open access
Keyword:Channel orientations
Electrical parameters
GaN/AlGaN HEMT
Low-frequency noise
Description
Summary:The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on 〈1 1 1〉 silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and Drain-Induced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0°, 90° and 45°).

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